Bipolar resistive switching using organic molecule is very promising for memory applications owing to their advantages, such as simple device structure, low manufacturing cost, stability, and flexibility. Herein we report Langmuir–Blodgett (LB) and spin-coated-film-based bipolar resistive switching devices using organic material 1,4-bis­(di­(1H-indol-3-yl)­methyl)­benzene (Indole1). The pressure–area per molecule isotherm (π–A), Brewster angle microscopy (BAM), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to formulate an idea about the organization and morphology of the organic material onto thin films. On the basis of the device structure and measurement protocol, it is observed that the device made up of Indole1 shows nonvolatile resistive random access memory (RRAM) behavior with a very high memory window (∼106), data sustainability (5400 s), device yield (86.7%), and repeatability. The oxidation–reduction process and electric-field-driven conduction are the keys behind such switching behavior. Because of very good data retention, repeatability, stability, and a high device yield, the switching device designed using compound Indole1 may be a potential candidate for memory applications.

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