The presence of surface traps is an important phenomenon in AlGaN/GaN HEMT. The electrical and physical properties of these surface traps have been analyzed through the study of 2DEG electron concentration along with the variation of aluminum percentage in the barrier layer of HEMT. This analysis shows that from deep to shallow donors, the percentage change in electron density in 2DEG gets saturated (near 8%) with change in aluminum concentration. The depth of the quantum potential well below the Fermi level is also analyzed and is found to get saturated (near 2%) with aluminum percentage when surface donor states energy changes to deep from shallow. The physics behind this collective effect is also analyzed through band diagram too. The effect of surface donor traps on the surface potential also has been discussed in detail. These surface states are modeled as donor states. Deep donor (EC − ED = 1.4 eV) to shallow donor (EC − ED = 0.2 eV) surface traps are thoroughly studied for the donor concentration of 1011 to 1016 cm−2. This study involves an aluminum concentration variation from 5 to 50%. This paper for the first time presents the comprehensive TCAD study of surface donor and analysis of electron concentration in the channel and 2DEG formation at AlGaN–GaN interface.

An improved parasitic resistance extraction from small-signal equivalent-circuit and effect of C ds in GaN HEMTs is presented. Parasitic capacitances are evaluated at ‘cold pinch off’ condition. More accurate extraction method of parasitic resistance is presented at low gate bias voltages compared to earlier published work. The impact of drain to source capacitance (C ds ) at low gate bias voltage is also reported in this manuscript. The validity of proposed parasitic resistance extraction procedure and effect of drain to source capacitance (C ds ) has been verified through error analysis with the measured S-parameters data of 0.8-μm of AlGaN/GaN high electron mobility transistor consisting 2 × 200-μm gate width. Proposed method shows good harmony between simulated and measured data up to 40 GHz frequency.

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