In the last decade, photovoltaic devices employing lead halide perovskites as light absorber have pulled the attention of researchers due to their outstanding performance. However, the lead halide perovskite based photovoltaic devices suffering from the toxicity of lead (Pb) and lower stability in air. Herein, we have replaced Pb with less toxic antimony (Sb) to prepare air stable and Pb‐free perovskite light absorber. Moreover, we have developed a two‐step procedure to prepare the high quality films of perovskite light absorber with device architecture of FTO/CL‐TiO2/m‐TiO2/MASbI/HTM/Au. This fabricated Pb‐free perovskite solar cell device prepared with two‐step procedure shows good performance with remarkably good open circuit voltage of 740 mV.

Recently, enormous efforts have been made to develop the efficient, lead (Pb) free and stable perovskite solar cells (PSCs). In this regards, various strategies were applied and the optoelectronic properties of various Pb free perovskites such as (CH3NH3)3Sb2I9, (CH3NH3)3Bi2I9, Cs3Sb2I9, Cs3Bi2I9, CH3NH3SnI3 and CH3NH3GeI3 etc have been investigated. However, the photovoltaic performance of the developed PSCs was still low and presence of organic moieties in common hole‐transport materials (HTMs) shows poor stability against moisture and heat. Herein, we have investigated the optoelectronic properties of all inorganic Pb free perovskites (Cs3Sb2I9=1 and Cs3Bi2I9=2) and employed novel strategies (dissolution‐recrystallization) to prepare the efficient Pb free PSCs. The band gaps of the 1 and 2 were found to be 2.2 eV and 2.0 eV, respectively. The developed PSCs with 1 and 2 exhibited the power conversion efficiency of 0.68% and 1.087%, respectively.

The electro-mechanical impedance (EMI) technique employs surface-bonded lead zirconate titanate piezo-electric ceramic (PZT) patches as impedance transducers for structural health monitoring (SHM) and non-destructive evaluation (NDE). The patches are bonded to the monitored structures using finitely thick adhesive bond layer, which introduces shear lag effect, thus invariably influencing the electro-mechanical admittance signatures. This paper presents a new simplified impedance model to incorporate shear lag effect into electro-mechanical admittance formulations, both 1D and 2D. This provides a closed-form analytical solution of the inverse problem, i.e to derive the true structural impedance from the measured conductance and susceptance signatures, thus an improvement over the existing models. The influence of various parameters (associated with the bond layer) on admittance signatures is investigated using the proposed model and the results compared with existing models. The results show that the new

This paper presents resistorless realization of inverse filters using voltage differencing transconductance amplifier (VDTA). First, four topologies are proposed which provide inverse low-pass, high-pass, band-pass, and band-reject responses. Subsequently, a unified inverse filter is also derived by incorporating two switches in the combination of proposed inverse low-pass and inverse band-pass topologies. This topology is capable of providing inverse low-pass, inverse high-pass, inverse band-pass, and inverse band-reject responses by appropriate switch settings. The proposed inverse filter structures are electronically tunable and use only grounded capacitors. The behavior of the proposed filters is also investigated for nonidealities. To verify the functionality of the proposed inverse filter circuits, SPICE simulation is carried out using 0.18-[Formula: see text]m CMOS technology parameters from TSMC. The effect of deviation in the active and passive component values on angular frequency is tested through Monte Carlo simulation.

Herein, we have reported a novel composite of nitrogen doped reduced graphene oxide (N-rGO) and strontium zirconate (SrZrO3).