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Zn-diffused InP layers have been prepared in a sealed quartz ampoule at 500 °C using a Zn3P2 source. The diffusion time ranged from 7 up to 90 min. As substrates, nearly dislocation-free S-doped InP crystals have been used. The lattice strain produced by diffusion has been carefully investigated by x-ray double crystal diffraction and the standing-waves method recording photoelectrons. The results show that the diffused layers exhibit a lattice contraction probably related to the Zn atoms substituting In. The diffuse/virgin interface has been found to be very sharp and the secondary ion mass spectrometry measurement of the Zn concentration profile has been confirmed. Finally, the maximum strain seems not to depend on the diffusion time, whereas the thickness of the diffused layer increases by increasing the time as expected for a diffusion process.

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A sealed tube method has been adopted to prepare Zn-diffused InP layers. Both Zn 3 P 2 and ZnϩInP have been used as sources. The samples were prepared at 500°C. The diffusion time ranged from 5 up to 120 min. Both S-and Zn-doped InP crystals have been used as substrates. The Zn depth profile has been measured by secondary ion mass spectroscopy, while the lattice strain produced by diffusion has been carefully investigated by x-ray double crystal diffraction and the standing-waves method of recording photoelectrons. The results show that in the S-doped crystal the diffused/virgin interface is very sharp and the diffused layers are lattice contracted. The concentration of Zn, as well as the lattice strain, do not depend on the diffusion time, whereas the thickness of the diffused layer increases with time. The plot of diffused layer thickness versus the square root of the diffusion time showed different slopes depending on the diffusion sources. Both lattice strain and diffusion depth depend on the diffusion source, whereas the concentration of Zn is not influenced by the type of diffusion source.

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