A differential capacitance‐voltage method for determining doping profiles in depth in epitaxial semiconductor films is described. Experimental profiles, in which the doping level generally is not flat but decreases with film thickness, are shown for several film growth conditions. A possible explanation for the observed distribution is discussed.

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In a preceding paper, the effect of the epitaxial silicon growth process on impurity distribution in the epitaxial film was treated in terms of a countercurrent model, and experimental results were presented for n-type films on n-type substrates. In the present paper, additional experimental data are presented for p-on-p, n-on-p, and p-on-n growth conditions.For n-on-p, or p-on-n growth, the electrical junctions are shifted by the process a distance of xj microns (the junction lag) from the substrate-film interface. The process-dominated junction lag may be much larger than that predicted from diffusion considerations. It is dependent on the film growth temerature and the doping levels in the substrate and in the gas phase. As predicted by the countercurrent distribution expression, it is greater for lower growth temperatures.Junction lags from immeasurably small values up to greater than 30~ have been generated. There is quantitative agreement between the observed magnitude of the junction lag and the value predicted by use of the countercurrent distribution expression. Also, for those samples measured electrically (with junction lags of 1.8-4.8~) the agreement between the measured mean impurity concentration level (by four-point probe measurements) in the epitaxial layer and the mean impurity level predicted on the basis of the distribution expression is quantitative.

A 24 factorial design in the growth parameters has been implemented for plasma‐enhanced CVD deposition of normala‐normalSiNH thin films. A variety of chemical and physical properties were used as responses to measure the strength of interactions between and among the factors studied. Statistically significant interactions of the primary factors (i.e., reactant gas ratio, pressure, temperature, and RF power) were found for almost all responses measured. SiH4/NH3 ratio and RF power were found to have the most and largest effects on all responses. Changes in these variables resulted in changes in the film stoichiometry which have far reaching implications for the refractive index and buffered HF etch rate of these films. In each response, the trends observed support conclusions of previous single‐variable experiments. The current experiments extend those studies by quantitating the various factor‐factor interactions.

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