BiFeO 3 was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO 3 films were grown on Si substrates with SrTiO 3 as a template layer and SrRuO 3 as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ϳ45 C/cm 2 . Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient ͑d 33 ͒ of ϳ60 pm/ V was observed, which is promising for applications in micro-electro-mechanical systems and actuators.
Articles you may be interested inEnergy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric and its impact on mobility Appl. Phys. Lett. 93, 083510 (2008); 10.1063/1.2976632 Electrical characterization of Ce O 2 ∕ Si interface properties of metal-oxide-semiconductor field-effect transistors with Ce O 2 gate dielectric Appl. Phys. Lett. 92, 043507 (2008); 10.1063/1.2838746 Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors Appl. Phys. Lett. 86, 082102 (2005); 10.1063/1.1866507 Voltage-induced degradation in self-aligned polycrystalline silicon gate n -type field-effect transistors with Hf O 2 gate dielectrics Appl. Phys. Lett. 85, 5965 (2004); 10.1063/1.1834992Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n -type and p -type metal-oxide-semiconductor field-effect transistors for high-k-HfO 2 dielectric
We report on the out-of-plane piezoelectric response (d33), measured via piezoresponse scanning force microscopy, of submicron capacitors fabricated from epitaxial PbZrxTi1−xO3 thin films. Investigations on 1 μm2 and smaller capacitors show that the substrate-induced constraint is dramatically reduced by nanostructuring. At zero field, the experimentally measured values of d33 for clamped as well as submicron capacitors are in good agreement with the predictions from thermodynamic theory. The theory also describes very well the field dependence of the piezoresponse of clamped capacitors of key compositions on the tetragonal side of the PbZrxTi1−xO3 phase diagram as well as the behavior of submicron PbZr0.2Ti0.8O3 (hard ferroelectric) capacitors. However, the field-dependent piezoresponse of submicron capacitors in compositions closer to the morphotropic phase boundary (soft ferroelectrics) is different from the behavior predicted by the theoretical calculations.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.