This paper represents new generation of slotted antennas for satellite application where the loss can be compensated in terms of power or gain of antenna. First option is very crucial because it totally depends on size of satellite so we have proposed the high gain antenna creating number of rectangular, trapezoidal, and I shape slots in logarithm size in Substrate Integrated Waveguide (SIW) structure. The structure consists of an array of various shape slots antenna designed to operate in C and X band applications. The basic structures have been designed over a RT duroid substrate with dielectric constant of 2.2 and with a thickness of 0.508 mm. Multiple slots array and shape of slot effects have been studied and analyzed using HFSS (High Frequency Structure Simulator). The designs have been supported with its return loss, gain plot, VSWR, and radiation pattern characteristics to validate multiband operation. All the proposed antennas give gain more than 9 dB and return loss better than −10 dB. However, the proposed structures have been very sensitive to their physical dimensions.

This article presents the single stage active frequency quadrupler design for generating a tone in the K band (23.5 GHz) frequency range using GaAs MESFET device. Harmonics current generation characteristics of GaAs MESFET (NE900000) is modeled and analyzed in reference with gate voltage. Based on this, its optimum operating class‐C is decided for its application as a frequency quadrupler. Using this model and introducing resonator (Idler) based harmonic rejection techniques, a narrowband −0.310 dBm output power ×4 frequency multiplier from C‐band to K‐band implemented using 0.5 μm GaAs MESFET. As the device operated in class‐C operating condition, it produces harmonics content due to clipping of output signal. At the output of the proposed multiplier design, a highly selective surface integrated waveguide (SIW) based bandpass filter (with Q is better than 120) is attached, which provides excellent rejection of fundamental component (>90 dBc) and other harmonics assuring minimum rejection of 30 dBc. The proposed design consumes 60 mW power and provides ∼−7 dB conversion gain with input power having 7 dBm. Feasibility and layout geometry of the proposed design has been evaluated and simulated on the substrate RT‐Duroid5880 using Agilent ADS software. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:767–776, 2016