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High quality TiN layers were deposited in an electron cyclotron resonance (ECR) plasma process at substrate temperatures between 100 and 600~ Tetrakis(dimethylamido)-titanium [Ti(NMe2)~] was used as the precursor and introduced into the downstream region of an ECR plasma. Nitrogen or ammonia have been used as plasma gases. The electrical properties and the film compositions of the gold-colored TiN layers mainly depend on the deposition rate. ECR plasma-activated nitrogen or ammonia reacts with TI(NMe2)4 to form low resistivity (100-150 ~cm) crystalline TiN films even at a substrate temperature of 100~ Films deposited between 200 and 600~ exhibited resistivities that decreased from 100 to 45 ~cm. Crystalline orientation is influenced by the chosen plasma gas. Preferred growth in the ( 111) and (100) directions were found by using ammonia and nitrogen, respectively. The measured resistivities and deposition temperatures are the lowest reported values for a plasma-enhanced TiN deposition process. Experiments with labeled nitrogen show that the nitrogen for the TiN formation is almost exclusively derived from the plasma gas. The deposits were characterized by four-point probe resistivity measurements, x-ray diffraction, forward recoil scattering, and Rutherford backscattering spectrometry.Step-coverage was checked by a scanning electron microscopy cross section of a contact via.

High-quality TiN layers were deposited in an electron-cyclotron-resonance (ECR) plasma process at substrate temperatures between 350 and 600 °C. Tetrakis(dimethylamido)-titanium [Ti(NMe2)4] was used as precursor and introduced into the downstream region of an ECR nitrogen plasma. The electrical properties of the gold-colored TiN layers (45–100 μΩ cm) depend on the deposition rate, the substrate temperature, the microwave (MW) power, and the plasma gas composition. TiN with a resistivity of 45 μΩ cm could be obtained at a substrate temperature of 600 °C and a MW power of 400 W. The measured resistivities are so far the best reported values obtained by using a metalorganic precursor for TiN deposition. The deposits were characterized by resistivity measurements and electron probe microanalysis for chemical analysis. The morphology and step coverage was checked by atomic force and scanning electron microscopy.