We report a bottom-up approach to integrate multiwalled carbon nanotubes (MWNTs) into multilevel interconnects in silicon integrated-circuit manufacturing. MWNTs are grown vertically from patterned catalyst spots using plasma-enhanced chemical vapor deposition. We demonstrate the capability to grow aligned structures ranging from a single tube to forest-like arrays at desired locations. SiO2 is deposited to encapsulate each nanotube and the substrate, followed by a mechanical polishing process for planarization. MWNTs retain their integrity and demonstrate electrical properties consistent with their original structure.

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Abstractin this paper we present results on the stability and lateral resolution capability of carbon

We demonstrate integration of carbon nanotubes into large scale vertically aligned electrode arrays, by filling the as-grown samples with conformal SiO2 using chemical vapor deposition. Subsequent mechanical polishing yields a flat surface with only the very ends of the nanotube array exposed. The electronic properties of individual carbon nanotubes in the array are measured using current-sensing atomic force microscopy. These vertical nanotube arrays are suitable for fabricating various electronic devices and sensors.