A comprehensive study on the effect of extrinsic base optimization on the RF performance of an advanced SiGe HBT is presented. An optimized extrinsic poly base with its interface to the epi-base passivated by boron ions is demonstrated to enhance the f max and the current gain almost two times and to reduce the low-frequency 1/f noise ten times and noise figure (NF) 0.5 dB, achieving f max of 45 GHz, 1/f noise corner frequency of 700 Hz at I B = 1:0 A, NF 1:0 dB at 900 MHz. Early voltage V A of 200 V is achieved, while maintaining a BV CEO of 8.0 V.

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A low cost 900MHz single-chip cordless telephone receiver is presented. This IC is suitable for 900MHz portable wireless applications including cordless telephone. Receiver functions are programmed through a serial port interface (SPI). The receiver IC can be operated either as a single conversion or dual conversion receiver with a 12dB SINAD of -11SdBm. Power consumption is rated at 20mA of supply current operating from 1.8V to 2.8V. This IC utilizes a k4pm BiCMOS process and features an LNA, hvo mixers, IF amplifier, I F limiter, demodulator, VCO, crystal reference oscillator, PLL, and an 80 bit SPI. All of these functions have been integrated onto a 1.09mm x 1.08"(1.18mm') die.

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