We have deposited diamond thin films remote from the active plasma region using an electron cyclotron resonance chemical vapor deposition technique. Diamond films were fabricated at temperatures in the range of 550–650 °C and gas pressures between 25 and 60 mTorr. The volume ratio of water to methanol was varied from 1:20 to 1:5 to optimize diamond film growth. High methanol content resulted in multiple nucleation in the growing diamond film, while higher water content led to complete etching of the film. A positive electrical bias was found to be essential for diamond thin film growth remote from the plasma region. The films were characterized by x-ray diffraction, micro-Raman, and scanning electron microscopy for phase identification, surface morphology, and bonding characteristics.

We have applied an electron cyclotron resonance technique to deposit diamond thin films on various substrates under remote plasma, low temperature (600°C) and low pressure (60 mTorr) conditions. Diamond films were grown on different substrates (silicon, molybdenum) with varying concentrations of precursor gases (methanol and water). A positive substrate bias (50 to 60 V) was found to be essential for the growth of diamond films onto substrates positioned 16 cm below the ECR plasma. The films were characterized by Raman, X-ray diffraction and scanning electron microscopy for microstructure, phase purity and chemical bonding characteristics. The effect of various processing parameters including gas pressure, gas composition, substrate temperature and bias have also been analyzed.