Low-pressure, low-temperature, and remote-plasma deposition of diamond thin films from water-methanol mixtures

Singh, Rajiv K.; Gilbert, Donald R.; Tellshow, R.; Holloway, Paul H.; Ochoa, Romulo; Simmons, J. H.; Koba, R.

doi:10.1063/1.108058

Cited by 28 publications

(6 citation statements)

References 3 publications

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“…Plasma discharges operated on water vapor, in either liquid or vapor form, can potentially be used in a wide range of applications. [1][2][3][4][5][6][7][8][9][10] For example, the decomposition of organic contaminants in waste water, such as phenol, into more benign byproducts has been studied using a pulsed streamer corona discharge. 1 In the intermediate pressure regime between tens of millitorr to one torr, water vapor plasmas are used in plasma-assisted chemical vapor deposition for diamond film formation.…”

Section: Introductionmentioning

confidence: 99%

Operating a radio-frequency plasma source on water vapor

Nguyen

Foster

Gallimore

2009

Review of Scientific Instruments

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A magnetically enhanced radio-frequency (rf) plasma source operating on water vapor has an extensive list of potential applications. In this work, the use of a rf plasma source to dissociate water vapor for hydrogen production is investigated. This paper describes a rf plasma source operated on water vapor and characterizes its plasma properties using a Langmuir probe, a residual gas analyzer, and a spectrometer. The plasma source operated first on argon and then on water vapor at operating pressures just over 300 mtorr. Argon and water vapor plasma number densities differ significantly. In the electropositive argon plasma, quasineutrality requires n(i) approximately = n(e), where n(i) is the positive ion density. But in the electronegative water plasma, quasineutrality requires n(i+) = n(i-) + n(e). The positive ion density and electron density of the water vapor plasma are approximately one and two orders of magnitude lower, respectively, than those of argon plasma. These results suggest that attachment and dissociative attachment are present in electronegative water vapor plasma. The electron temperature for this water vapor plasma source is between 1.5 and 4 eV. Without an applied axial magnetic field, hydrogen production increases linearly with rf power. With an axial magnetic field, hydrogen production jumps to a maximum value at 500 W and then saturates with rf power. The presence of the applied axial magnetic field is therefore shown to enhance hydrogen production.

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Section: Introductionmentioning

confidence: 99%

Operating a radio-frequency plasma source on water vapor

Nguyen

Foster

Gallimore

2009

Review of Scientific Instruments

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“…9 Figure 1 shows the two system configurations used for producing oxygen ion beams. 9 Figure 1 shows the two system configurations used for producing oxygen ion beams.…”

Section: Methodsmentioning

confidence: 99%

Ion beam-assisted planarization of chemically vapor deposited diamond thin films using electron cyclotron resonance plasma

Lee

Gilbert

Singh

1997

Journal of Elec Materi

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“…From one of the earliest synthesizing techniques like high pressure and high temperature (HPHT) process to the modern day chemical vapour deposition (CVD) technique, a range of versatile techniques are employed for developing diamond films with tailor‐made properties . Variation in film deposition parameters can give rise to changes in the grain size as well as the morphology of the films, which in turn can lead to fluctuations in films' properties like conductivity, field emission properties etc.…”

Section: Introductionmentioning

confidence: 99%

On the role of graphite in ultrananocrystalline diamond films used for electron field emitter applications

Kurian

Sankaran

Lin

2014

Physica Status Solidi (a)

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This Feature Article gives an account of the different pieces of work conducted by various groups around the world aimed at constituting a single model explaining the enhancement of conductivity and electron field emission properties in diamond. The scope of the presence of graphite phase or the evolution of intermediate energy levels within the band gap or defects in the diamond phase being causes of such enhancement has been explored by various groups. Along with this we present the studies performed by our group, the enhancement of the field emission and conductivity employing different approaches like ion irradiation, ion implantation, ion doping in the plasma or formation of composite films. From our studies we reveal that such modifications of properties are related to microstructural alterations. The prominent change observed, and contributing to this enhancement, is the increase in the grain boundaries, with sp2 graphitic phases residing in them. The effect of n‐ or p‐type doing into diamond is ruled out. The betterment of the field emission and conductivity is attributed to the interconnected sp2 phases within the grain boundaries, which form itineraries for electrons to traverse through the material.

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Low-pressure, low-temperature, and remote-plasma deposition of diamond thin films from water-methanol mixtures

Cited by 28 publications

References 3 publications

Operating a radio-frequency plasma source on water vapor

Operating a radio-frequency plasma source on water vapor

Ion beam-assisted planarization of chemically vapor deposited diamond thin films using electron cyclotron resonance plasma

On the role of graphite in ultrananocrystalline diamond films used for electron field emitter applications

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