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In this paper we present new scaling routines for any table/function based nonlinear FET model. These measurement based routines are very accurate and can also be used to calculate temperature behaviour. Also the prediction of noise behaviour is possible for scaled devices.

In that paper a detailed comparison between the differential Colpitts oscillator and the well-known crosscoupled oscillator topology is presented. Frequency tuning is realized by using a combination of switchable capacitors and an analog varactor diode. The main focus is to minimize the phase noise, which is a limiting factor in the realization of RF-radios for modern communication systems. Other criteria are power consumption, tuning range and chip area. The charge-phase transfer function, which characterizes the impulse-sensitivity function (ISF), is calculated. Thus, the impact of harmonics, which are coupled into the oscillator, can be determined. Effects like VDD pushing and load pulling are covered also. All oscillators presented in this paper are manufactured in a 0.35 µm SiGe-BiCMOS process.

As MMICs become more widespread in commercial appllcations the costs of production gain increased attention. For the MMIC-Designer it is important to reduce the chip size, while keeping the electrical characteristics. To demonstrate which size reduction is possible using lumped elements, this paper documents the comparison of a distributed and a lumped element MMIC K-band amplifier in coplanar line technique. The distributed element amplifier is a two-stage design and needs a size of 3 mm2. In the frequency range from 18 to 20 GHz the gain is more than 12 dB. The lumped element amplifier is a three-stage design, which has a size of 1 mm2. For the same frequency range the gain is more than 23 dB.