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An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 °C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.

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This article presents experimental results for morphological assessment of sub-50-nm thick hydrogenated amorphous carbon (a-C:H) overcoats. The films were grown by rf plasma enhanced chemical vapor deposition using Ar/C2H2 gas mixture onto heterogeneous (Al2O3–TiC) ceramic substrates. They were analyzed using complementary information from scanning electron microscopy, energy dispersive x-ray analysis and atomic force microscopy. We found that the bias deposition voltage and the nature of the substrate (Al2O3 or TiC regions) adversely affect both growth rate and microstructure. Argon inclusion in the C2H2 plasma during the first stage of growth is responsible for the observed effects. These results suggest that the amorphous carbon layer is denser on the TiC than on the Al2O3 region.

The paper will present an overview of our latest results using various ultra-thin film amorphous carbon deposition techniques, and focus on first to grow studies, nano-characterisation of the electrical, mechanical and barrier properties associated with films grown on various substrate types applied to the magnetic recording industry. Although some of the characterisation is carried out on 10nm coatings, the nanomechanical measurements are performed on samples with thickness values between 30nm to 200nm. This overview of our work deals with PECVD deposition techniques and examines ultra-thin film growth on Si and Al 2 O 3: TiC substrates. Some results are presented on the functional benefits of doping a-C:H films with Silicon and Nitrogen. All the work is related to the ability to produce effective 3nm to 10nm overcoat layers for new magnetic recording applications.