This paper presents research on modeling and simulation of the lag effect, which is one of the most important effects in a deep reactive ion etching (DRIE) process. From theoretical analysis and experimental investigation of the lag effect, it has been found that the shielding effect and flow change of reactive ions are two dominant factors. Based on our previous work on DRIE modeling, a modified model considering these two lag effect factors has been established, and a 2D DRIE simulator is developed according to this model. The simulation results were in good agreement with experiments.Corrections were made to this article on 8 November 2006. Reproduction of figure 1 with permission from the author, Dr Chung, was acknowledged and referencing of the figure was corrected. In addition textual references to two of Dr Chung's articles (reference [10] and new reference [13]) were corrected. The corrected electronic version is identical to the print version.

This paper presents a new two-dimensional (2D) simulator, which can simulate the etching polymerization alternation in the Bosch process for an infinite trench. Physical models for etching and deposition are developed. Having been implemented with these models and a string–cell hybrid method based on string structure and cell structure, this simulator has the ability to simulate the etching of different material types. After model parameter extraction from experiments, this simulator is used to simulate several phenomena in the Bosch process, including the formation and adjustment of sidewall scallops and the profile control of trench etching. The simulation results are compared with experiments and a good match can be found.

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