No abstract

The thermolytic deposition of MoS2 nanolayers for use in Si solar cells is investigated for which a thin MoS2 nanolayer is grown on a crystalline Si substrate by the thermolysis method. The deposited MoS2 nanolayer and Si substrate are annealed and show a transition from an amorphous to a crystalline phase as the annealing temperature increases. The MoS2 (002) crystalline peak at 14.04° appears at an annealing temperature of 450 °C. The heterojunction interface of MoS2/np‐Si shows a mixed amorphous and crystalline phase. The Al/MoS2 has better Ohmic contact compared with Al/Si. The MoS2 nanolayer is introduced into the cell structure of a SiNx/a‐Si(n)/MoS2/np‐Si cell, the cell shows a photoconversion efficiency of 11.47%.

No abstract

No abstract

No abstract