Molybdenum disulfide (MoS2) synthesized by Chemical Vapor Deposition (CVD) is commonly accompanied by some intermediate products in the form of MoO3-x, and causing MoS2-MoO3-x hybrids with diverse structures. In this...

The platform for supporting two-dimensional (2D) materials such as graphene has a critical influence on the electronic properties of the materials it supports. Here we report on the filtered cathodic vacuum arc deposition (FCVAD) of atomically flat diamond-like carbon (DLC) films with varied C sp 3 /sp 2 content ratio by modulating the parameters of substrate bias voltage, then used as a dielectric platform for supporting graphene. By doing this, an all-carbon DLC−graphene heterostructure would be formed. Through characterizing this heterostructure and constructing graphene field effect transistors (FETs) on DLC, it was shown that graphene on DLC platforms had less doping from the substrate and improved FET carrier mobility compared with that of graphene on SiO 2 /Si substrate. Moreover, the graphene on different DLC platforms exhibited an increased FET mobility (up to ∼7032 and 5558 cm −2 V −1 s −1 for hole and electron, respectively) with the increase of C sp 3 /sp 2 bond fraction in DLC which could be tuned by the negative bias voltage applied to the deposited substrates in the FCVAD synthesis of DLC here.

Graphene coating has been proposed to be a promising oxidation barrier for metals because of its chemical inertia and physical impermeability. Nevertheless, chemical vapor deposition (CVD)‐grown graphene on metal surfaces results in many structural defects and growth imperfections, which would serve as oxidative originators and favor a substantial galvanic corrosion at such interfaces in the long term. On this basis, oxidative originators including graphene structural defects and CVD growth imperfections of graphene on copper have been reviewed from the perspective of CVD growth of graphene. The associated oxidation processes and long‐term corrosion mechanisms as a protective coating for Cu are discussed. Finally, the remaining challenges and potential improvement of graphene and graphene‐like materials grown on surfaces as a barrier coating are outlooked. We aim to providing comprehensive knowledge about the relationship between various graphene defects/growth imperfections and the oxidation/corrosion mechanisms as a protective coating, seeking a roadmap to promote the development of cheap, powerful and effective barrier technologies based on such ultrathin two‐dimensional materials.

Due to the unique bandgap tunability of bilayer graphene, the preparation of large‐sized bilayer graphene has attracted a wide range of attention. Herein, the preparation of bilayer graphene, from stacking order to growth mechanism, is reviewed, and the chemical vapor deposition (CVD) of AB‐stacked bilayer graphene on copper substrate is emphasized. Various methods and growth strategies to synthesize bilayer graphene and the corresponding growth mechanisms are discussed. Mechanisms of layer‐by‐layer growth, the hydrogen passivation of graphene edges for the formation of bilayers, and carbon atoms penetrating through a copper wall for bilayer growth are included and highlighted for a better understanding of controlling bilayer graphene uniformity and forming its stacking order. Finally, the remaining challenges and the potential development of CVD‐controlled growth of bilayer graphene are outlined.

Nitrogen-doped graphene (NG) was synthesized through the chemical vapor deposition (CVD) of graphene on Cu substrates, which were pre-implanted with N ions by the ion implantation method. The pre-implanted N ions in the Cu substrate could dope graphene by the substitution of C atoms during the CVD growth of graphene, forming NG. Based on this, NG’s long-term protection properties for Cu were evaluated by ambient exposure for a corrosion test. The results showed that NG can obviously reduce the natural oxidation of Cu in the long-term exposure compared with the case of pristine graphene (PG) coated on Cu. Moreover, with the increase in pre-implanted N dose, the formed NG’s long-term protection for Cu improved. This indicates that the modification of graphene by N doping is an effective way to improve the corrosion resistance of the PG coating owing to the reduction in its conductivity, which would inhibit galvanic corrosion by cutting off electron transport across the interface in their long-term protection. These findings provide insight into corrosion mechanisms of the graphene coating and correlate with its conductive nature based on heteroatoms doping, which is a potential route for improving the corrosion resistance of graphene as an effective barrier coating for metals.