We study the transport of carriers in intrinsic graphene by means of an ensemble Monte Carlo technique. Scattering by acoustic and optical phonons dominates the transport. We find that velocity 'saturation' sets in at relatively low values of the electric field, but that the value is dependent upon the carrier density. Velocity overshoot is also observed to occur in these simulations.

Recent studies have shown that a high K dielectric solvent screens the impurities for room temperature transport in graphene and the mobility has been found to increase by orders of magnitude. This gives what is probably the intrinsic, phonon limited mobility at room temperature, and we have confirmed this with simulation. Mobility as high as 44 000 cm(2) V(-1) s(-1) was achieved. At very low density, impurity scattering still is the determining factor for mobility, but this is significantly reduced in the recent experiments due to the dielectric screening. At high density, impurity scattering becomes negligible.

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Graphene is a novel new material with an unusual zero-gap band structure, where electrons and holes are closely connected through a relativistic Dirac equation. It is of interest to study the various scattering mechanisms and the transport through device structures fabricated on this new material. Here, we use Rode's method to study the transport through gated graphene devices. The results are compared with recent results obtained for both back-gates and electrochemical gates. The transport is dominated by the trapped charge at the graphene-SiO 2 , but phonon scattering is shown to be important.

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