No abstract

III-V Nitride based microcantilevers, with AlGaN/GaN heterostructure field effect transistor as the piezoresistive deflection transducer, have been investigated under steady state, transient, ac, and UV illuminated conditions and compared to theoretical calculations. The steady state transverse gauge factor (GFt) was found to be much larger than theoretical estimates and increased regularly with more negative gate bias. Transient GFt demonstrated opposite sign but similar gate bias dependence and was measured as high as ∼860. Measurements under ac biasing conditions and UV illumination resulted in a lower GFt of ∼13, which agrees with theoretical calculations owing to elimination of charge trapping effects.

Nanostructured graphite (NG) has been investigated as a sensing material using a highly sensitive potentiometric detection technique. NO2 concentration down to 60ppb was detected in ambient conditions using NG functionalization layer. Simultaneous current and surface work function (SWF) change transients measured using NG functionalization layer reveal much shorter response time for the later, which is attributed to its dependence solely on surface molecular adsorption. The gradient of SWF with respect to the current transient was found to be independent of gaseous concentration and fraction of preoccupied surface states.

Diameter-dependent electrical properties of InN nanowires (NWs) grown by chemical vapor deposition have been investigated. The NWs exhibited interesting properties of coplanar deflection at specific angles, either spontaneously, or when induced by other NWs or lithographically patterned barriers. InN NW-based back-gated field effect transistors (FETs) showed excellent gate control and drain current saturation behaviors. Both NW conductance and carrier mobility calculated from the FET characteristics were found to increase regularly with a decrease in NW diameter. The observed mobility and conductivity variations have been modeled by considering NW surface and core conduction paths.

A potentiometric sensor platform has been used for NO2 detection at room temperature by measuring the adsorption induced surface work function changes in In2O3 thin films deposited on Si using a solution based process. The highly resistive films were unsuitable for amperometric detection of NO2; however, significant work function changes of ∼30mV were measured for ∼50s of exposure to 70ppm NO2, and detection down to 600ppb (parts per 109) was possible. A model for the transient response was developed, which satisfactorily fits the experimental data. Acceleration of the desorption transient under ultraviolet illumination has also been investigated.