Growth direction modulation and diameter-dependent mobility in InN nanowires

Abstract

Diameter-dependent electrical properties of InN nanowires (NWs) grown by chemical vapor deposition have been investigated. The NWs exhibited interesting properties of coplanar deflection at specific angles, either spontaneously, or when induced by other NWs or lithographically patterned barriers. InN NW-based back-gated field effect transistors (FETs) showed excellent gate control and drain current saturation behaviors. Both NW conductance and carrier mobility calculated from the FET characteristics were found to increase regularly with a decrease in NW diameter. The observed mobility and conductivity variations have been modeled by considering NW surface and core conduction paths.

Effect of catalyst nanoparticle size on growth direction and morphology of InN nanowires

“…9,10 InN, as an important III-V compound semiconductor with a direct band gap energy of about 0.7 eV at room temperature 11 and surface electron accumulation, 12 has attracted growing attention owing to its good performances in semiconductor optoelectronic, 13 Tera-Hertz emission devices, 14,15 as well as high-speed heterojunction FETs. 16 At present, plentiful InN nanostructures, including NWs, 3 nanorods, 17 nanotubes, 18 nanobelts, 19 nanonetworks 20 and nanoflowers 21 have been reported. The studies have improved both the understanding of the fundamental physics related to crystal growth and the knowledge regarding the potential applications of InN nanostructures to nanodevices.…”

InN nanowires based multi-modal environmental sensors

“…NWs show spontaneous bending and in most cases they deflect from one another with angles multiples of 30º. An interesting case is when the NWs deflect back and forth from two different NWs, forming nano-junctions.The growth orientation as well as NW bending was discussed in our previous publication [9]. Using our unique growth process, the diameters of the NWs were found to be less than 20 nm and in some cases even less than 10 nm.…”

“…Single crystalline high quality InN NWs were observed to grow on the plane of the surface in [110] direction with diameters between 10-50 nm and lengths of 5-20 µm [9]. Single and multiple InN NWs were fabricated by the technique mentioned earlier [9], and were characterized by scanning electron microscopy (SEM) and I d -V d measurements.…”

“…Single and multiple InN NWs were fabricated by the technique mentioned earlier [9], and were characterized by scanning electron microscopy (SEM) and I d -V d measurements.…”

“…3(b) represents the I d -V g curves and shows a threshold voltage of -12 V and maximum transconductance dI d /dV g as ~ -0.58 μA/V under the measurement conditions of V d = 2 V. For this device, there was an average of 3 NWs between the source and drain with average length of 10 μm, average diameter of 20 nm. Using the formulation for an FET with multiple conducting NWs [9] = μ (∑ )   where L i and C i are length and capacitance for the ith NW in the FET and V d is the drain voltage bias, and the capacitance given by [9] C = ( , )…”