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Several silicon containing topresists for bilayer oxygen reactive ion etching systems were developed and examined. Each topresist consists of a silicon containing alkaline soluble copolymer and a 2‐diazo‐1‐naphthalenone‐4‐sulphonic acid ester photoactive compond (PAC). Half micron structures in the topresist were obtained with two different resist systems through deep‐UV (257 nm) or iline exposure. The etch rate ratios (planarizing layer:copolymer) vary between 7:1 and 13:1 under anisotropic etching conditions. Linewidth loss during oxygen RIE (reactive ion etching) pattern transfer is a problem for resists containing about 10% silicon, but equal lines and spaces after etching can be obtained through the use of thick topresists or linewidth bias in the topresist prior to etching.

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The patterning of organic layer materials is often hindered by the effects of the conditions used to “develop” the resist material, for example high temperatures for strong bases, which attack the substrate. The process described here allows the patterning even of delicate layers of oriented nonlinear optical polymers. The figure shown a patterned polyimide film 115 μm thick.