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A low temperature, 180 °C, amorphous Si (a‐Si:H) process on bonded stainless steel substrates is discussed and a 3.8‐inch QVGA active matrix (AM) electrophoretic display as well as a 64×64 electrophoretic display with integrated column drivers are demonstrated. The n‐channel thin‐film transistors (TFTs) exhibited saturation mobilities of 0.7 cm2/V‐sec, median drive currents of 26.2 μA and low defectivity.

A low temperature amorphous zinc indium oxide (ZIO) thin film transistor (TFT) backplane technology for high information content flexible organic light emitting diode (OLED) displays has been developed. We have fabricated 4.1-in. diagonal OLED backplanes on the Flexible Display Center’s six-inch wafer-scale pilot line using ZIO as the active layer. The ZIO based TFTs exhibited an effective saturation mobility of 18.6 cm2/V-s and a threshold voltage shift of 2.2 Volts or less under positive and negative gate bias DC stress for 10000 seconds. We report on the critical steps in the evolution of the backplane process: the qualification of the low temperature (200°C) ZIO process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays.

BackgroundRecent studies have shown that Americans appear to be increasingly owning and carrying firearms for personal protection, and are increasingly storing their firearms loaded. However, the prevalence of firearm carry and/or storage with a round chambered has not hitherto been studied; in this arming configuration the weapon is loaded, with a bullet resting against the firing pin, ready to fire if the trigger is pulled.