No abstract

No abstract

The embedded wafer level ball grid array (eWLB) is a novel packaging technology that shows excellent performance for millimeter-wave (mm-wave) applications. We present simulation and measurement results of single-ended and differential transmission lines realized using the thin-film redistribution layers (RDL) of an eWLB. We demonstrate the capabilities for the integration of passives on example of a configurable 17/18 GHz down-converter circuit realized in silicongermanium (SiGe) technology with a fan-in eWLB differential inductor used for the LC tank. We compare the performance of differential chip-package-board transitions realized in an eWLB and in other common package types. We report an optimized compact chip-package-board transition in the eWLB. We obtain a simulated insertion loss as low as −0.65 dB and a return loss below −16 dB at 77 GHz without external matching networks. We introduce the concept of antenna integration in the eWLB and show examples of single-ended and differential antenna structures. Finally, we present for the first time a single-chip four-channel 77 GHz transceiver in SiGe integrated in the eWLB package together with four dipole antennas. The presented examples demonstrate that the eWLB technology is an attractive candidate for mm-wave applications including system-in-package (SiP). IntroductionNear field communication or wireless local and personal networking (WLAN, WPAN) at 60 GHz, adaptive cruise control (ACC) radar at 77 GHz, or high-resolution radio imaging at 94 GHz and 140 GHz are only a few examples of applications for upcoming future markets [1]. The size of a package becomes comparable to a wavelength at mm-wave frequencies. The parasitic wave effects such as impedance mismatch, signal reflections, crosstalk, and radiation can no longer be neglected even for very small chip-scale packages. This leads to large discontinuities at the chip/package and package/board interfaces that must be optimized. Moreover, the small wavelength at mm-wave frequencies demands high-precision fabrication. Even small variations due to process tolerances can have a significant impact on the end-product performance. The use of traditional packages is therefore limited at mmwave frequencies.The embedded wafer level ball grid array (eWLB) technology is a new assembly and packaging technology that offers attractive possibilities for mm-wave systems. The length of interconnections in the redistribution layer (RDL) is very short. This results in reduced parasitics and excellent electrical performance up to mm-wave frequencies. Moreover, excellent electrical properties of the materials and a high metal-pattern

The high-frequency performance of a novel SiGe HBT module with mono-crystalline base link is investigated in an industrial 0.13 µm BiCMOS environment. The main feature of this new HBT module is a significant reduction of the external base resistance as shown here by direct comparison with a conventional double-poly-silicon technology. Peak f T /f max values of 300 GHz/500 GHz are achieved. A minimum CML ring oscillator gate delay of 1.8 ps and a record operation frequency for a SiGe static frequency divider of 161 GHz are demonstrated.

No abstract