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For measuring X-rays and gamma-rays with better energy resolution and higher efficiency than conventional semiconductor detectors such as Si and Ge detectors, we are studying InSb radiation detectors. Previously, we fabricated p-InSb Schottky type, pn-junction type detectors, and undoped InSb Schottky type detectors with an electrode of 3 mm in diameter, and measured alpha particles of 241 Am. For measuring gamma-rays, we fabricated undoped InSb Schottky type detectors with smaller electrode areas. Gamma-ray signals were clearly separated from the background, and differences between energy spectra of 241 Am and 133 Ba gamma-rays were observed.

For measuring X-rays and gamma-rays with better energy resolution and higher efficiency than conventional semiconductor detectors such as Si and Ge detectors, we are studying InSb radiation detectors. Previously, we fabricated p-InSb Schottky type, pn-junction type detectors, and undoped InSb Schottky type detectors with an electrode of 3 mm in diameter, and measured alpha particles of 241 Am. For measuring gamma-rays, we fabricated undoped InSb Schottky type detectors with smaller electrode areas. Gamma-ray signals were clearly separated from the background, and differences between energy spectra of 241 Am and 133 Ba gamma-rays were observed.

Gamma rays of 241 Am were measured by a Schottky type undoped InSb detector at 4.2 K. Although a photopeak was not observed, the signals of gamma rays were clearly separated from noises.