Nanowire lasers are sought for near‐field and on‐chip photonic applications as they provide integrable, coherent, and monochromatic radiation: the functional performance (threshold and wavelength) is dependent on both the opto‐electronic and crystallographic properties of each nanowire. However, scalable bottom‐up manufacturing techniques often suffer from inter‐nanowire variation, leading to differences in yield and performance between individual nanowires. Establishing the relationship between manufacturing controls, geometric and material properties, and the lasing performance is a crucial step toward optimisation; however, this is challenging to achieve due to the interdependance of such properties. Here, a high‐throughput correlative approach is presented to characterise over 5000 individual GaAsP/GaAs multiple quantum well nanowire lasers. Fitting the spontaneous emission provides the threshold carrier density, while coherence length measurements determine the end‐facet reflectivity. The performance is intrinsically related to the width of a single quantum well due to quantum confinement and bandfilling effects. Unexpectedly, there is no strong relationship between the properties of the lasing cavity and the threshold: instead the threshold is negatively correlated with the non‐radiative recombination lifetime of the carriers. This approach therefore provides an optimisation strategy that is not accessible through small‐scale studies.

Optoelectronic micro- and nanostructures have a vast parameter space to explore for modification and optimization of their functional performance. This paper reports on a data-led approach using high-throughput single nanostructure spectroscopy to probe >8000 structures, allowing for holistic analysis of multiple material and optoelectronic parameters with statistical confidence. The methodology is applied to surface-guided CsPbBr 3 nanowires, which have complex and interrelated geometric, structural, and electronic properties. Photoluminescence-based measurements, studying both the surface and embedded interfaces, exploits the natural inter nanowire geometric variation to show that increasing the nanowire width reduces the optical bandgap, increases the recombination rate in the nanowire bulk, and reduces the rate at the surface interface. A model of carrier recombination and diffusion ascribes these trends to carrier density and strain effects at the interfaces and self-consistently retrieves values for carrier mobility, trap densities, bandgap, diffusion length, and internal quantum efficiency. The model predicts parameter trends, such as the variation of internal quantum efficiency with width, which is confirmed by experimental verification. As this approach requires minimal a priori information, it is widely applicable to nano- and microscale materials.

Fabricated from ZnO, III-N, chalcogenide-based, III-V, hybrid perovskite or other materials, semiconductor nanowires offer single-element and array functionality as photovoltaic, non-linear, electroluminescent and lasing components. In many applications their advantageous properties emerge from their geometry; a high surface-to-volume ratio for facile access to carriers, wavelength-scale dimensions for waveguiding or a small nanowire-substrate footprint enabling heterogeneous growth. However, inhomogeneity during bottom-up growth is ubiquitous and can impact morphology, geometry, crystal structure, defect density, heterostructure dimensions and ultimately functional performance. In this topical review, we discuss the origin and impact of heterogeneity within and between optoelectronic nanowires, and introduce methods to assess, optimise and ultimately exploit wire-to-wire disorder.

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Bottom-up grown nanostructures often suffer from significant dimensional inhomogeneity, and for quantum confined heterostructures, this can lead to a corresponding large variation in electronic properties. A high-throughput characterization methodology is applied to >15,000 nanoskived sections of highly strained GaAsP/GaAs radial core/shell quantum well heterostructures revealing high emission uniformity. While scanning electron microscopy shows a wide nanowire diameter spread of 540–60 +60 nm, photoluminescence reveals a tightly bounded band-to-band transition energy of 1546–3 +4 meV. A highly strained core/shell nanowire design is shown to reduce the dependence of emission on the quantum well width variation significantly more than in the unstrained case.