Abstract-A general circuit-based model of LC oscillator phase noise applicable to both white noise and 1 noise is presented.Using the Kurokawa theory, differential equations governing the relationship between amplitude and phase noise at the tank are derived and solved. Closed form equations are obtained for the IEEE oscillator phase noise for both white and 1 noise. These solutions introduce new parameters which take into account the correlation between the amplitude noise and phase noise and link them to the oscillator circuit operating point. These relations are then used to obtain the final expression for Voltage noise power density across the output oscillator terminals assuming the noise can be modeled by stationary Gaussian processes. For white noise, general conditions under which the phase noise relaxes to closed-form Lorentzian spectra are derived for two practical limiting cases.

No abstract

No abstract

No abstract

We present analytic formulas for simultaneously extracting the parasitic resistances, inductances, and the intrinsic parameters of a small-signal FET equivalent circuit model including the non-quasi-static (NQS) charging time-constants associated with the gate and drain charges, respectively. For the NQS equivalent circuit topology considered, there exists a continuum of solutions for the circuit parameters, as a function of the source resistance, giving exactly the same frequency response fit. A multi-bias analysis is used to determine the final source resistance. Realistic results are obtained for power LDMOSFETs despite the very small value of the parasitics in these power RF devices.Index Terms-FET equivalent circuits, LDMOSFET, microwave small-signal modeling, non-quasi-static, parameter extraction.