In this paper presents the computer simulation results on the investigations of the ion scattering processe on the defect InP(001)<110>,<ī10> surface under low-energy grazing ion bombardment have been presented. The peculiarities trajectories of the scattered ions from surface defect, atomic chain and semichannel have been investigated by computer simulation. It was found some trajectories nearby surface atomic chain which have loop shape and a line form. At grazing ion incidence, from a correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the missing atom on the monocrystal surface damaged by the ion bombardment.

It has been shown that this method is quite suitable for surface studies and diagnostics of many component materials. The values of the azimuthal angle of distribution of Ne, Ar and Xe ions scattered from InGaP (001) <110> are obtained. The relationship between the spatial variables of the scattered beam (mainly azimuthal angular spectra) and the type of ions has been established. The correlation between focusing properties of surface semichannel with a type of bombardment ion at the different angle of incidence has been shown.