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We present results on the measurement of the charge collection efficiency of a p + /n/p + silicon detector irradiated to 1u10 15 n/cm 2 , operated in the temperature range between 80 K and 200 K. For comparison, measurements obtained with a standard silicon diode (p + /n/n + ), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage. At 130 K and 500 V applied bias the double-p detector shows a CCE of 80%, an unprecedented result for a silicon detector irradiated to such a high dose.3

We present in this paper industrial nondestructive X-ray and neutron testing applications with a real-time digital imaging device and control system X-View based on active matrix flat-panel imager technology. X-View consists of X-ray or neutron converters, arrays of amorphous silicon (a-Si:H) thin-film transistors and photodiodes, a fast real-time electronic system for readout and digitization of images and appropriate computer tools for control, real-time image treatment data representation, and off-line analysis. Some basic image-quality parameters and different objects were assessed for quantitative and qualitative analysis. Results show a wide dynamic range (16 bits ADC resolution) and lack of blooming, a high frame rate (up to 25 fps), and rapid image capture. Images are directly displayed, on-line, on a PC monitor and archived in a digital form for radiography and radioscopy procedures and limitless industrial applications in X-ray and neutron inspections.