Real-time flat-panel pixel imaging system and control for X-ray and neutron detection

Chapuy, S.; Dimcovski, M.; Dimcovski, Z.; Lehmann, Eberhard; Pachoud, M.; Valley, J.-F.; Verdun, Francis R.; Vontobel, Peter

doi:10.1109/23.983268

Cited by 8 publications

(2 citation statements)

References 10 publications

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“…See figure 10 0.7200 199.9 99.2745 6 detection, defined by the method through which their internal electric field is established; the merits and difficulties associated with each class are discussed below in the context of application. The charge-coupled device (CCD), although reported in the solid-state neutron detection literature [144,159,160] (not to be associated with scintillation-based CCD transduction [161,162]), is not included as its own class here due to its limitations in radiation hardness, temporal resolution and ability to detect over a continuous area [163]; however, some of the CCD limitations have recently been rectified with the charge injection device (CID) which may be worth further investigation [164]. For the detector class in which the internal electrical field is produced only by an external voltage (as shown schematically in figure 4(a)) the dielectric is a direct-conversion material that acts to both capture neutrons as well as transduce the primary capture reaction products.…”

Section: Norm (%)mentioning

confidence: 99%

The physics of solid-state neutron detector materials and geometries

Caruso

2010

J. Phys.: Condens. Matter

125

111

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Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

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Section: Norm (%)mentioning

confidence: 99%

The physics of solid-state neutron detector materials and geometries

Caruso

2010

J. Phys.: Condens. Matter

125

111

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“…The CMOS technology has been preferred to the more classical a-Si(H) technology [13][14][15] because it has the advantage to allow pixel size significantly smaller than 100 µm while keeping filling ratio as high as 80 % [16].…”

Section: Detector Hardwarementioning

confidence: 99%

Optimization of a high-resolution real-time solid state x-ray detection system for mammography

Chapuy¹,

Dimcovski²,

Graulich

et al. 2004

SPIE Proceedings

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In this study we present Vista-Mamma 50, a novel detection system for high resolution real-time digital mammography. A matrix sensor (12 cm x 12 cm) consists of a high luminance CsI:Tl crystal grown with columnar structure on the top of a pin photodiode matrix driven by CMOS transistors. This imaging technology is known to allow achievement of a pixel size as small as 50 µm or less with a fill factor of the sensitive area of about 80%. The sensor is equipped with a fast real-time electronic system for readout and digitization of images with a dynamic range of 12 bits. Images can be obtained at a frame rate as high as 9 images per second in a 4 x 4 binning operation mode. Appropriate computerized control tools, real-time image treatment, data representation and off-line analysis have been developed. On-line image processing is automatically applied to each frame, including offset and gain corrections and masking of defective pixels. Quantitative measurements including dose response, modulation transfer function (MTF) and detective quantum efficiency are presented. It was found that the detector response shows linear dependence on the entrance dose. The results from the MTF showed that a resolution of ≥ 8 lp/mm could be achieved. The high value of the DQE obtained could be ascribed to the large fill factor. The high resolution detector that we present is well adapted to the image quality which is required for the standards for applications in mammography. Some preliminary results have been obtained for microcalcifications performed on equivalent breast phantoms. Clinical tests are in progress.

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The use of amorphous Silicon flat panels as detector in neutron imaging

Lehmann

Vontobel

2004

Applied Radiation and Isotopes

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Real-time flat-panel pixel imaging system and control for X-ray and neutron detection

Cited by 8 publications

References 10 publications

The physics of solid-state neutron detector materials and geometries

The physics of solid-state neutron detector materials and geometries

Optimization of a high-resolution real-time solid state x-ray detection system for mammography

The use of amorphous Silicon flat panels as detector in neutron imaging

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