Abstract. We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20×20 nm 2 is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices.

The thermal properties of the phase-change chalcogenide alloy Ge2Sb2Te5 in its three phases (amorphous, cubic, and hexagonal) and of Si3N4 and SiO2 have been studied to obtain reliable values for device modeling. Thermal conductivity was determined, along with a quantitative estimation of the thermal resistances of the layers’ interfaces, not negligible for highly scaled devices. Electrical resistivity of the chalcogenide material has also been investigated during the phase transition by in situ measurement at constant heating rate.

We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect transistor. The different coupling capacitances of the donor and the quantum dot with the control and the back gates are exploited to generate a relative rigid shift of their energy spectrum as a function of the back gate voltage, causing the crossing of the energy levels. We observe the sequential tunneling through the D 2− and the D 3− energy levels of the donor hybridized at the oxide interface at 4.2 K. Their respective states form an honeycomb pattern with the quantum dot states. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor, thus realizing a physical qubit for quantum information processing applications. Keywords: silicon quantum device, single dopant, double quantum dot, quantum transport * Electronic address: enrico.prati@cnr.it

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