A comprehensive model is developed from ab-initio calculations to understand the effects of co-implanted fluorine (F) on boron (B) and phosphorus (P) under sub-amorphizing and amorphizing conditions. The depth of the amorphous-crystalline interface and the implant depth of F are the key parameters to understand the interactions. Under sub-amorphizing conditions, B and P diffusion are enhanced, in contrast to amorphized regions where the model predicts retarded diffusion. This analysis predicts the F effect on B and P to be entirely due to interactions of F with point-defects.

We use the 6×6 Luttinger–Kohn Hamiltonian to study the effects of the spin-orbit split-off band on the properties of holes tunneling across quantum wells. The transmission coefficients of heavy and light holes decrease sharply (antiresonances) at energies coinciding with the formation of boundstates in two effective potential wells for the light and SO bands. The origin of these effective potential wells is due to the difference between the threshold energies for free propagation in the quantum well and cladding layers for holes in the light and SO bands. The dwell times of holes increase sharply at the antiresonance energies and are found to reach a maximum at some values of the transverse wave vector for holes incident with a fixed energy. The probability of heavy- to light-hole conversion (and vice versa) is found to increase at the antiresonance energies. These results are compared with the predictions of a one-band effective-mass description of hole transport to stress the importance of the coupling between the hole subbands on the tunneling properties of holes across quantum wells.

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Articles you may be interested inTunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction J. Appl. Phys. 113, 094502 (2013); 10.1063/1.4794010 Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application J. Appl. Phys. 113, 024319 (2013); 10.1063/1.4775606 Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy Appl. Phys. Lett. 101, 233102 (2012); 10.1063/1.4768001Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructureWe use the envelope function formalism ͓M. G. Burt, J. Phys. Condens. Matter 4, 6651 ͑1992͔͒ with the rigorous boundary conditions ͓B. A. Foreman, Phys. Rev. B 48, 4964 ͑1993͔͒ to analyze the tunneling properties of holes across an abrupt InP/In 0.53 Ga 0.47 As heterojunction. We compare our results to those derived with boundary conditions obtained from an ad hoc ''symmetrized'' form of Burt's Hamiltonian. Our analysis includes the coupling between heavy, light, and spin-orbit bands. The percentage difference between the tunneling coefficients of heavy and light holes calculated in the two approaches increases ͑up to a maximum value of 30%͒ with the magnitude of the hole wave vector component parallel to the heterointerface. In addition, the tunneling coefficients of holes are found to be quite sensitive to the orientation of the hole wave vector parallel to the heterointerface. This sensitivity is particularly noticeable for large values of the hole transverse wave vector.

In the advanced Low Power (LP) CMOS technology nodes gateto-source/drain overlap capacitance (Cov), gate-to-contact capacitance (CcO) and gate sidewall fringe capacitance (Cf) have become increasingly important component(s) of transistor parasitic. Accurate extraction and modeling of these parasitic are essential in accurate estimation of circuit performance. In this paper we describe test structure design and extraction of these parasitic components from silicon, which we later correlate to circuit performance. SPICE simulations were performed to substantiate the measurements as needed.