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Abstract:Low-temperature CVD method has been investigated f o r siliconnitride films by using higher silanes and hydrazine aiming a t thin-film transistor application. The deposition temperature has been reduced t o as low as 350°c, i.e.. by about 4 0 0~~ lower than t h e typical temperature. Atomic N/Si ratio was more than 4/3, i.e., the film was stoichiometric SiN, and hydrogen content was as high as 20 atomic%. Breakdown field strength, spec' ic r e s i s t i v i t 1g M I interface s t a t e density were about GMV/cm. 6x10 Q cm and lx I~'~Z'~V-', respectkely.

The photoluminescence (PL) enhancement of a dye-doped polymer film covered with electrospun nanofibers has been demonstrated. The time variation of the PL intensity is measured while nanofibers are being formed on the surface of the sample by electrospinning. The PL intensity of the sample gradually increases during nanofiber electrospinning. The PL enhancement occurs along the front direction of the sample rather than along the horizontal direction. The total enhancement factor measured in an integrating sphere is approximately 1.2. These effects are brought about by improving the excitation efficiency and light extraction caused by the light scattering in the nanofibers.