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The valence and conduction band discontinuities for the lattice matched (Ga,In)P/GaAs heterojunction have been determined by capacitance-voltage (C-V) profiling. Both p-p and n-n heterojunctions were profiled, in order to obtain separate and independent values for both the valence-band-edge discontinuity (ΔEv) and the conduction-band discontinuity (ΔEc). The band lineup is found to be of the straddling type with the valence- and conduction-band discontinuities 0.24 and 0.22 eV, respectively, with an estimated accuracy of ±10 meV. Computer reconstruction of the C-V profiles was used to check the consistency of the data. The band offset data indicate that the (Ga,In)P/(Al,Ga)As system should be staggered for a certain range of Al compositions.

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A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with bandpass filtering have equivalent efficiency and linearity to push-pull configurations. The common-source class-B circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power-added efficiency (PAE) of 34%. Simulations of common-drain class-B designs predict a PAE of 54% with a superior IM3 suppression of more than 45 dBc over a wider range of bias due to the strong series-series negative feedback offered by the load resistance

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