Thin metallic silicide films epitaxially grown on Si(111) and their role in Si-metal-Si devices J. Vac. Sci. Technol. A 5, 2111 (1987); 10.1116/1.574931The effect of interposed silicide thickness on growth rate in bilayer silicide thinfilm structures: The Si111 /Pd2Si/Cr system J.
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