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This is the first report on the mechanical properties of hafnium- and boron-added Al-Si-Cu alloy film for LSI interconnects. Two to three hundred ppm of hafnium and boron addition into Al-Si-Cu alloy film does not influence the Al alloy properties for metal lines as LSI interconnects, such as its low resistivity, low ohmic contact resistance with Si, and fine-line patterning feasibility. The mechanical properties of the Al alloy film, however, change greatly. Vertical hillock and lateral hillock formation is considerably suppressed during heat treatments used in LSI fabrication processes. Stress-induced void formation is also reduced during aging test at 125?C. These effects due to hafnium and boron addition are considered to be an impurity precipitation effect ihat was confirmed by X-ray diffraction analysis and electron probe microanalysis.

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