Solid phase epitaxial ͑SPE͒ annealing at low temperature has the advantage of high dopant activation and very little dopant diffusion. However, due to the low thermal budget engaged in SPE, a large amount of defects can exist in the area beyond the original interface of the crystal and the pre-amorphized layer. These defects may cause severe junction leakage. They may also cause dopant diffusion and deactivation in a following higher temperature process. This work studies the reverse annealing behaviors during a second annealing step for SPE-formed p ϩ /n junction using either 1 keV B ϩ or 5 keV BF 2 ϩ implants. Four-point probe, secondary-ion-mass spectroscopy, and transmission electron microscopy are used in this study. The results show that the boron deactivation after second-step annealing is not only correlated with the transmission electron diffraction ͑TED͒, but also correlated with the end of range defect evolution. The results also show that BF2 implanted wafer has slower boron deactivation, less TED and slower defect evolution than the B implanted wafer. In addition, the BF2 implanted wafer shows a much slower SPE regrowth rate at 550°C than the B implanted wafer.

Uniaxial stressors have received much interest over the last few years as a method to enhance carrier mobility and, hence, drive current with minimal modification to the structure of the transistor. However, the shift in device design to complex structures with multiple crystallographic orientations like advanced bulk-FinFETs has significantly complicated the incorporation of mobility enhancing stressors. For the n-FinFET in particular, it turns out that the crystal quality and growth rate of Si:P and Si:C:P films can be strongly dependent upon the crystallographic orientation of the starting surface. Both for raised and recessed epi we find that formation of (111) facets and twin defects occurs already after a limited growth on the fin. Besides the growth on raised and recessed fins, we also discuss the resistivity increase in Si:C:P layers as a function of carbon content and demonstrate that laser annealed Si:P films with high phosphorus content (e.g. 4% or higher) can be considered as potential alternatives to Si:C:P with a lower resistivity for the same strain.

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In an effort to develop engine/vehicle test methods that will reflect real-world emission characteristics, West Virginia University (WVU) designed and conducted a study on a Class-8 tractor with an electronically controlled diesel engine that was mounted on a chassis dynamometer in the Old Dominion University Langley full-scale wind tunnel. With wind speeds set at 88 km/hr in the tunnel, and the tractor operating at 88 km/hr on the chassis dynamometer, a Scanning Mobility Particle Sizer (SMPS) was employed for measuring PM size distributions and concentrations. The SMPS was housed in a container that was attached to a three-axis gantry in the wind tunnel. Background PM sizedistributions were measured with another SMPS unit that was located upstream of the truck plume. Ambient temperatures were recorded at each of the sampling locations. The truck was also operated through transient tests with vehicle speeds varying from 65 to 88 km/hr, with a wind speed of 76 km/hr. Sampling of the plume with the truck operating at 88 km/hr revealed uni-modal distributions with geometric mean diameter (GMD) values ranging from 55 to 80 nm. When size distributions from five locations in the plume were corrected for concentration with respect to dilution, they were found to be similar. Size distributions and concentrations of PM emissions from the tractor operating at 88 km/hr were found to agree with those from few other heavy-duty diesel vehicles that this team of researchers had previously tested in the field using the WVU Transportable Heavy-duty Vehicle Emissions Testing Laboratory. Under idle operation a distinct nuclei mode was detected with GMD varying from 14 to 24 nm.

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