In this paper, we propose a novel operation of a MOSFET that is suitable for ultra-low voltage (0.6 V and below) VLSI circuits. Experimental demonstration was carried out in a Silicon-On-Insulator (SOI) technology. In this device, the threshold voltage of the device is a function of its gate voltage, i.e., as the gate voltage increases the threshold voltage (Vt) drops resulting in a much higher current drive than standard MOSFET for low-power supply voltages. On the other hand, Vt is high at Vgs = 0, therefore the leakage current is low. We provide extensive experimental results and two-dimensional (2-D) device and mixed-mode simulations to analyze this device and compare its performance with a standard MOSFET. These results verify excellent inverter dc characteristics down to V dd = 0:2 V, and good ring oscillator performance down to 0.3 V for Dynamic Threshold-Voltage MOSFET (DTMOS). engineering from the Massachusetts Institute of Technology, Cambridge, in 1975, and the M.S.

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Turkey is moving westward relative to Eurasia, thereby accommodating the collision between Arabia and Eurasia. This motion is mostly taken up by strike‐slip deformation along the North and East Anatolian Faults. The Sea of Marmara lies over the direct westward continuation of the North Anatolian Fault zone. Just east of the Sea of Marmara, the North Anatolian Fault splits into three strands, two of which continue into the sea. While the locations of the faults are well constrained on land, it has not yet been determined how the deformation is transferred across the Sea of Marmara, onto the faults on the west coast of Turkey. We present results from a seismic reflection survey undertaken to map the faults as they continue through the three deep Marmara Sea basins of Çlnarclk, Central Marmara and Tekirdag, in order to determine how the deformation is distributed across the Sea of Marmara, and how it is taken up on the western side of the sea. The data show active dipping faults with associated tilting of sedimentary layers, connecting the North Anatolian Fault to strike‐slip faults that cut the Biga and Gallipoli Peninsulas.

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Abstruct-A new mode of operation for Silicon-On-Insulator (SOI) MOSFET is experimentally investigated. This mode gives rise to a Dynamic Threshold voltage MOSFET (DTMOS). DTMOS threshold voltage drops as gate voltage is raised, resulting in a much higher current drive than regular MOSFET at low Vdd. On the other hand, Vt is high at V,, = 0, thus the leakage current is low. Suitability of this device for ultra low voltage operation is demonstrated by ring oscillator performance down to Vdd = 0.5 v.