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The results of studies and working out and creation of a thermosensor on the basis of highly compensated silicon doped with Mn and S are presented in this work. It is stated that the thermosensitivity and the stability of the parameters of the worked out thermosensor are higher than those of the existing sensitive thermosensor. It is stated that the thermosensor on the basis of highly compensated silicon doped with manganese Si 〈 B,Mn 〉 more effectively functions in the region of temperatures T = 100-400 K, and the thermosensor on the basis of Si 〈 B,S 〉 can be successfully used in the region of more high temperatures T = 200-450 ° C.

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The spatial distributions of ions (K+, Na+) passed through thin polycrystalline and single-crystalline Al films with the thickness from 180 to 600 Angstrem and critical channeling angles have been studied. The ion energies have been varied within the range E0=10-30 keV. It has been shown that an increase in the energy of the primary ion beam leads to a decrease in the width of the maxima of the angular distribution, which is associated with a decrease in the critical channeling angle psicr. It has been found that the value psicr does not exceed 4-50 for axial channeling and 9-100 for planar channeling Keywords: critical angle, passage of ions, angular distribution, channeling, spatial distribution.