No abstract

In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on threedimensional numerical simulations, is presented. The model takes into account the source/drain electrode and contact areas. It includes 5 capacitance components that describe the different fringing electrical couplings that exist inside the FinFET structure. The semi-analytical model accurately calculates the total extrinsic gate capacitance as function of the main geometrical parameters of Triple-Gate FinFET.