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An effective rigorous 3-D optical modeling of thin-film silicon solar cells based on finite element method (FEM) is presented. The simulation of a flat single junction thin-film silicon solar cell on thick glass (i.e., superstrate configuration) is used to validate a commercial FEM-based package, the High Frequency Structure Simulator (HFSS). The results are compared with those of the reference software, Advanced Semiconductor Analysis (ASA) program, proving that the HFSS is capable of correctly handling glass as an incident material within very timely, short, and numerically stable calculations. By using the HFSS, we simulated single junction thin-film silicon solar cells on glass substrates textured with one-dimensional (1-D) and two-dimensional (2-D) trapezoid-shaped diffraction gratings. The correctness of the computed results, with respect to an actual device, is discussed, and the impact of different polarizations on spectral response and optical losses is examined. From the simulations carried out, optimal combinations for period and height in both 1-D and 2-D grating configurations can be indicated, leading to short-circuit current percentage increase with respect to a flat cell of, respectively, 25.46% and 32.53%. With very limited computer memory usage and computational time in the order of tens of minutes for a single simulation, we promote the usage of 3-D FEM as a rigorous and efficient way to simulate thin-film silicon solar cells.

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The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate depends on the concentration of active recombination centers and the recombination efficacy of each of these centers. The first factor causes the ideality factor of the devices to be non-integer and to vary with voltage. The temperature dependence of the dark current can be expressed by its activation energy. For microcrystalline silicon solar cells the activation energy varies with voltage with a so-called thermal ideality factor of 2. This value was derived for devices with a spatially uniform defect distribution and reflects the recombination efficacy. Here we present results of a thickness series of a-Si:H p-i-n solar cells. We have matched the experimental curves with computer simulations, and show that the voltage-dependent ideality factor curve can be used to extract information on the cross sections for electron and hole capture. Also, the activation energy is used as a measure for the mobility gap, resulting in a mobility gap for a-Si:H of 1.69 eV. We find a thermal ideality factor close to 2 for all samples. This is explained with a theoretical derivation, followed by a comparison between the internal electric field strength and the spatial variation of the defect density in the intrinsic layer. The thermal ideality factor is shown to be insensitive to the defect distribution and the recombination profile in the device. It is, therefore, an appropriate parameter to characterize a-Si:H p-i-n devices, providing direct insight on the recombination efficacy.

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