International audienceIn this paper, an ill-posed inverse ellipsometric problem for thin film characterization is studied. The aim is to determine the thickness, the refractive index and the coefficient of extinction of homogeneous films deposited on a substrate without assuming any a priori knowledge of the dispersion law. Different methods are implemented for the benchmark. The first method considers the spectroscopic ellipsometer as an addition of single wavelength ellipsometers coupled only via the film thickness. The second is an improvement of the first one and uses Tikhonov regularization in order to smooth out the parameter curve. Cross-validation technique is used to determine the best regularization coefficient. The third method consists in a library searching. The aim is to choose the best combination of parameters inside a pre-computed library. In order to be more accurate, we also used multi-angle and multi-thickness measurements combined with the Tikhonov regularization method. This complementary approach is also part of the benchmark. The same polymer resist material is used as the thin film under test, with two different thicknesses and three angles of measurement. The paper discloses the results obtained with these different methods and provides elements for the choice of the most efficient strategy

In situ and real time control of the different process steps in semiconductor device manufacturing becomes a critical challenge, especially for the lithography and plasma etching processes. Dynamic scatterometry is among the few solutions able to meet the requirement for in line monitoring. In this article, the authors demonstrate that dynamic scatterometry can be used as a real time monitoring technique during the resist trimming process. Different process parameters, such as chemistries and bias power, were used in the experiments for the demonstration; they discuss the influence of these different parameters on the measurement. For validation purposes, the dynamic scatterometry measurements are compared to three dimensional atomic force microscopy measurements made in the same process conditions. The agreement between both is excellent.

Mueller matrix ellipsometry (MME) is a powerful metrology tool for nanomanufacturing. The application of MME necessitates electromagnetic computations for inverse problems of metrology determination in both the conventional optimization process and the recent neutral network approach. In this study, we present an efficient, rigorous coupled-wave analysis (RCWA) simulation of multilayer nanostructures to quantify reflected waves, enabling the fast simulation of the corresponding Mueller matrix. Wave propagations in the component layers are characterized by local scattering matrices (s-matrices), which are efficiently computed and integrated into the global s-matrix of the structures to describe the optical responses. The performance of our work is demonstrated through three-dimensional (3D) multilayer nanohole structures in the practical case of industrial Muller matrix measurements of optical diffusers. Another case of plasmonic biosensing is also used to validate our work in simulating full optical responses. The results show significant numerical improvements for the examples, demonstrating the gain in using the RCWA method to address the metrological studies of multilayer nanodevices.

A roadmap extending far beyond the current 22nm CMOS node has been presented several times.[1] This roadmap includes the use of a highly regular layout style which can be decomposed into "lines and cuts."[2] The "lines" can be done with existing optical immersion lithography and pitch division with self-aligned spacers.[3] The "cuts" can be done with either multiple exposures using immersion lithography, or a hybrid solution using either EUV or direct-write ebeam.[4] The choice for "cuts" will be driven by the availability of cost-effective, manufacturing-ready equipment and infrastructure.Optical lithography improvements have enabled scaling far beyond what was expected; for example, soft x-rays (aka EUV) were in the semiconductor roadmap as early as 1994 since optical resolution was not expected for sub-100nm features. However, steady improvements and innovations such as Excimer laser sources and immersion photolithography have allowed some manufacturers to build 22nm CMOS SOCs with single-exposure optical lithography.With the transition from random complex 2D shapes to regular 1D-patterns at 28nm, the "lines and cuts" approach can extend CMOS logic to at least the 7nm node. The spacer double patterning for lines and optical cuts patterning is expected to be used down to the 14nm node. In this study, we extend the scaling to 18nm half-pitch which is approximately the 10-11nm node using spacer pitch division and complementary e-beam lithography.For practical reasons, E-Beam lithography is used as well to expose the "mandrel" patterns that support the spacers. However, in a production mode, it might be cost effective to replace this step by a standard 193nm exposure and applying the spacer technique twice to divide the pitch by 3 or 4.The Metal-1 "cut" pattern is designed for a reasonably complex logic function with ~100k gates of combinatorial logic and flip-flops. Since the final conductor is defined by a Damascene process, the "cut" patterns become islands of resist blocking hard-mask trenches. The shapes are often small and positioned on a dense grid making this layer to be the most critical one. This is why direct-write e-beam patterning, possibly using massively parallel beams, is well suited for this task. In this study, we show that a conventional shaped beam system can already pattern the 11nm node Metal-1 layer with reasonable overlay margin.The combination of design style, optical lithography plus pitch-division, and e-beam lithography appears to provide a scaling path far into the future.