Interface trap passivation at the SiO2∕carbon-terminated (0001¯) face of 4H-SiC utilizing nitridation and hydrogenation has been evaluated. The SiO2∕SiC interface, created by dry thermal oxidation on the C face, shows appreciably higher interface state density near the conduction band compared to the (0001) Si face. A postoxidation anneal in nitric oxide followed by a postmetallization anneal in hydrogen results in dramatic reduction of the trap density by over an order of magnitude near the conduction band. The electrical measurements have been correlated with the interfacial chemistry.

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Introduction: Zinc oxide (ZnO) is a metal-oxide semiconductor with a direct and wide energy band gap of 3.37 eV,

The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO 2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO 2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO 2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 x 10 12 cm -2 eV -1 to about 6 x 10 11 cm -2 eV -1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11-20) 4H-SiC.