An analytical method has been developed that gives a simple and practical means of extracting small-signal equivalent circuit parameters (ECP's) of GaAs FET's with negligibly small bond-pad capacitances. Only the S-parameter measurement of the pinched-off cold field-effect transistor (FET) is enough to determine the extrinsic FET ECP's. The intrinsic FET ECP's of a medium-power Ku-band GaAs FET chip with a total gate width of 800 Irm have been analytically extracted for two types of eight-element intrinsic FET models; Model 1 (Curtice model) andModel 2 that differ in the control voltage (li:) definition. Model 2 with 17, defined across the gate-source capacitance is found more appropriate judging from the smaller frequency dependence of the ECP's and a better agreement between the calculated and measured S-parameters over 2-20 GHz.

No abstract

No abstract

No abstract

No abstract