No abstract

The utilization of WSi2 thin films as gate electrodes in field-effect transistors depends on the ability of this material to form a continuous electrically insulating SiO2 overlayer. In the steam oxidation of WSi2 films deposited on polysilicon, SiO2 forms on the surface by means of the rapid diffusion of Si through the WSi2 which appears in this case to be quite inert. During the initial stages of the steam oxidation of WSi2 films deposited on SiO2, removal of Si from the silicide (to form SiO2) apparently leads to the formation of free W, rather than the anticipated tungsten-rich W3Si3.

No abstract

No abstract

Thin film studies are frequently concerned with the characteristics of metastable alloy phases. However, the analysis of diffusion in thin film couples can lead to new contributions to the understanding of the equilibrium state. In Cr-Pt films new ordered phases Pt3Cr and PtCr have been found. PtCr is slightly tetragonal. * Electrochemical Society Active Member.Key words: equilibrium diagram, Cr-Pt phases, ordering transformation, backscattering analysis, structure of CrPt, thin films of Cr-Pt, diffusion in Cr-Pt. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-05-27 to IP