Our unique, high‐efficiency c‐Si solar cell, named the HIT cell, has shown considerable potential to improve junction properties and surface passivation since it was first developed. The improved properties in efficiency and temperature dependence compared to conventional p – n diffused c‐Si solar cells are featured in HIT power 21TM solar cell modules and other applications which are now on the market. In the area of research, further improvement in the junction properties of the a‐Si/c‐Si heterojunction has been examined, and the highest efficiency to date of 20.1% has recently been achieved for a cell size of 101 cm2. The high open circuit voltage exceeding 700 mV, due to the excellent surface passivation of the HIT structure, is responsible for this efficiency. In this paper, recent progress in HIT cells by Sanyo will be introduced. Copyright © 2000 John Wiley & Sons, Ltd.

An aperture-area conversion efficiency of 20.0% (intrinsic efficiency: 21 .O%) has been achieved for a 1 .Ocm2 CZ n-type single crystalline silicon (c-Si) solar cell, by using the "HIT (Heterojunction with Intrinsic Thinlayer)" structure on both sides of the cell. This is the world's highest value for a c-Si solar cell in which the junction is fabricated at a low temperature of below 200 'C.In this paper, the junction fabrication technologies and features of the HIT structure are reviewed. The stability under light and thermal exposure, and the temperature dependence on performance of a highefficiency HIT solar cell are also reported.

No abstract

Articles you may be interested inGas-efficient deposition of device-quality hydrogenated amorphous silicon using low gas flows and power modulated radio-frequency discharges J. Vac. Sci. Technol. A 21, 156 (2003); 10.1116/1.1527899 Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hotwire chemical vapor deposition Wide band gap amorphous hydrogenated carbon films grown by plasma enhanced chemical vapor deposition J.

No abstract