No abstract

The growth of social media has crossed the boundary from individual to organizational use, bringing with it a set of benefits and risks. To mitigate these risks and ensure the benefits of social media use are realized, organizations have developed a host of new policies, procedures, and hiring practices. However, research to date has yet to provide a comprehensive view on the nature of risk associated with the use of social media by organizations. Using a multi-panel Delphi approach consisting of new entrants to the workforce, certified human resource professionals, and certified Information Technology auditors, this study seeks to understand organizational social media risk. The results of the Delphi panels are compared against a textual analysis of 40 social media policies to provide a comprehensive view of the current state of social media policy development. We conclude with directions for future research that may guide researchers interested in exploring social media risk in organizations.

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.

Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on single ion implantation and single ion detection for development of electronic devices for quantum computing. The scope of international research into single ion implantation is presented in the context of our own research in the Centre for Quantum Computation and Communication Technology in Australia. Various single ion detection schemes are presented, and limitations on dopant placement accuracy due to ion straggling are discussed together with pathways for scale-up to multiple quantum devices on the one chip. Possible future directions for ion implantation in quantum computing and communications are also discussed.