In this paper, a supercapacitor with the features of optical transparency and mechanical flexibility has been fabricated using metal oxide nanowire/carbon nanotube heterogeneous film, and studies found that the power density can reach 7.48 kW/kg after galvanostatic measurements. In addition, to study the stability of flexible and transparent supercapacitor, the device was examined for a large number of cycles and showed a good retention of capacity (∼88%). This approach could work as the platform for future transparent and flexible nanoelectronics.

Nanotube/nanowire chemical sensors have attracted significant attention for the detection of explosives and nerve agents. We report TNT sensors based on aligned carbon nanotubes transferred onto fabric as prototype wearable sensors, with an excellent sensitivity down to 8 ppb at room temperature. In addition, we also fabricated TNT sensors based on ZnO nanowires with a detection limit of 40 ppb at room temperature. Those sensors have great potential for electronic nose systems.

We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (approximately 1490 cm(2) V(-1) s(-1)), current on/off ratios (5.7 x 10(6)), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 microA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm(2) V(-1) s(-1) and 160 microA, respectively. All devices exhibit good optical transparency (approximately 81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated seven-segment AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature.