Articles you may be interested in Optimization of InAs/AlInAs quantum wells based up-converter for silicon solar cells GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices Appl. Phys. Lett. 83, 2599 (2003); 10.1063/1.1614835 Piezoelectric field-enhanced second-order nonlinear optical susceptibilities in wurtzite GaN/AlGaN quantum wells We have described a method for structural parameters optimization of GaN/AlGaN multiple quantum well based up-converter for silicon solar cells. It involves a systematic tuning of individual step quantum wells by use of the genetic algorithm for global optimization. In quantum well structures, the up-conversion process can be achieved by utilizing nonlinear optical effects based on intersubband transitions. Both single and double step quantum wells have been tested in order to maximize the second order susceptibility derived from the density matrix formalism. The results obtained for single step wells proved slightly better and have been further pursued to obtain a more complex design, optimized for conversion of an entire range of incident photon energies. V C 2014 AIP Publishing LLC. [http://dx.

No abstract

We measured temporal variations of the distributions of C2 and C3 radical densities in carbon plumes produced by laser ablation of graphite in ambient He gas. Laser-induced fluorescence imaging spectroscopy was used for the measurement. The temporal variations of total numbers of C2 and C3 contained in plumes were evaluated by integrating the density distributions. The experimental observations have shown that the gas-phase production of C2 is comparable to the direct production from the target, while C3 is mainly produced in gas phase by three-body reactions between C and C2. In addition, we have discussed a scenario for the temporal evolution of heavy clusters (Cn with n⩾4). The present results are useful for understanding initial formation processes of carbon clusters in laser-ablation plumes.

No abstract

A 3D packaging technology has been developed for 4 Gbit DRAM. Highly-doped poly-Si through-silicon vias (TSVs) are used for vertical traces inside silicon and interconnection between DRAM chips to realize a DRAM compatible process. Through optimization of the process conditions and layout design, fast poly-Si filling has been obtained. The entire packaging was carried out at the wafer level by using the socalled SMAFTI technology. A new bump and wiring structure for feedthrough interposer (FTI) has also been developed for fine-pitch and low-cost bonding. Simulation of the transfer function of FTI wiring indicated a 3 Gbps/pin data transfer capability.