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A new GaAs field-effect transistor structure is proposed and demonstrated. The gate electrode consists of an asymmetric planar-doped barrier (PDB) diode which behaves like a metal-semiconductor Schottky contact. The device allows engineering of the gate energy barrier, and optimization of transconductance and gate capacitance for a given application. The larger gate energy barrier in conjunction with the self-aligned nature of the process holds promise for both large signal analog and digital switching applications.

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