This study examined the effectiveness of an Ar neutral beam as a surface treatment for improving the field emission properties of screen-printed carbon nanotubes (CNTs). A short period of the neutral beam treatment on tape-activated CNTs enhanced the emission properties of the CNTs, showing a decrease in the turn-on field and an increase in the number of emission sites. The neutral beam treatment appeared to render the CNT surfaces more actively by exposing more CNTs from the CNT paste without cutting or kinking the already exposed long CNT emitters. The treated CNTs emitted more electrons than the CNTs treated using other methods. When the field emission properties were measured after the neutral beam treatment, the turn-on field decreased from 1.65to0.60V∕μm and the emission field at 1mA∕cm2 decreased from 3.10to2.41V∕μm. After the neutral beam treatment for 10s, there was an improvement in the stability of the emission current at a constant electric field. It is expected that the neutral beam treatment introduced in this study will provide an easy way of improving the emission intensity and stability of screen-printed CNT emitters.

Atmospheric pressure plasma etching of SiO2 was examined using a modified remote-type dielectric barrier discharge (DBD), called “pin-to-plate DBD.” The effect of adding four gases CF4, C4F8, O2, and Ar to the base gas mixture containing N2 (60 slm) (slm denotes standard liters per minute)/NF3 (600 SCCM) (SCCM denotes cubic centimeter per minute at STP) on the SiO2 etch characteristics was investigated. The results showed that the SiO2 etch rate decreased continuously with increasing C4F8 (200–800 SCCM) addition, whereas the SiO2 etch rate increased with increasing CF4 (1–10 slm) addition up to 7 slm CF4. This increase in the SiO2 etch rate up to 7 slm CF4 was attributed to the effective removal of Si in SiO2 by F atoms through the removal of oxygen in SiO2 by carbon in the CFX in the plasma. However, the decrease in SiO2 etch rate with further increases in CF4 flow rate above 7 slm was attributed to the formation of a thick C–F polymer layer on the SiO2 surface. A SiO2 etch rate of approximately 243 nm/min was obtained with a gas mixture of N2 (60 slm)/NF3 (600 SCCM)/CF4 (7 slm), and an input voltage and operating frequency to the source of 10 kV and 30 kHz, respectively. The addition of 200 SCCM Ar to the above gas mixture increased the SiO2 etch rate to approximately 263 nm/min. This is possibly due to the increased ionization and dissociation of reactive species through penning ionization of Ar.

We show the existence of a new class of astrophysical objects where the self-gravity of the dust is balanced by the force arising from shielded electric fields on the charged dust. The problem of equilibrium dust clouds is formulated in terms of an equation of hydrostatic force balance together with an equation of state. Because of the dust charge reduction at high dust density, the adiabatic index reduces from two to zero. This gives rise to a mass limit M AS for the maximum dust mass that can be supported against gravitational collapse by these fields. If the total mass M D of the dust in the interstellar cloud exceeds M AS , the dust collapses, while in the case M D < M AS , equilibrium may be achieved. The physics of the mass limit is similar to the Chandrasekhar's mass limit for compact objects, such as white dwarfs and neutron stars.

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